Wide Gan Stripes by Lateral Growth in Metalorganic Vapor Phase Epitaxy
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxyApplied Physics Letters, 1997
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Ridge-geometry InGaN multi-quantum-well-structure laser diodesApplied Physics Letters, 1996