Chemical State of Phosphorus at the Silicon Surface
- 1 July 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (7R) , 4299-4300
- https://doi.org/10.1143/jjap.36.4299
Abstract
We used synchrotron radiation photoelectron spectroscopy (SRPES) to investigate the chemical state of phosphorus that piles up at the silicon surface covered with a native oxide and found that the piled-up phosphorus does not make bonds with oxygen.Keywords
This publication has 5 references indexed in Scilit:
- Characterization of Phosphorus Pile‐Up at the SiO2 / Si InterfaceJournal of the Electrochemical Society, 1993
- Solid surface analysis beamline with a grating/crystal monochromator at the photon factoryNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989
- Microscopic structure of the/Si interfacePhysical Review B, 1988
- Effect of Annealing on Chemical State of Phosphorus in SiO2 FilmsJournal of the Electrochemical Society, 1985
- Studies of Phosphorus Pile‐Up at the Si ‐ SiO2 Interface Using Auger Sputter ProfilingJournal of the Electrochemical Society, 1981