40 Gbit/s optical communications: InP DHBT technology, circuits and system experiments
- 20 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 185-188
- https://doi.org/10.1109/gaas.1999.803754
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Improvement of CBE grown InGaAs/InP HBT's using a carbon doped and compositionally graded basePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- InP/InGaAs heterojunction bipolar transistor circuits for high bit-rate ETDM transmission systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- InP DHBT technology and design methodology for high-bit-rate optical communications circuitsIEEE Journal of Solid-State Circuits, 1998
- Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their OperationJapanese Journal of Applied Physics, 1996