Improvement of CBE grown InGaAs/InP HBT's using a carbon doped and compositionally graded base
- 20 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- InP HBT self-aligned technology for 40 Gbit/s ICs: fabrication and CAD geometric modelPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- InP/InGaAs heterojunction bipolar transistor circuits for high bit-rate ETDM transmission systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Carrier lifetime in carbon doped In/sub 0.53/Ga/sub 0.47/AsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- CBE growth of carbon doped InGaAs/InP HBTs for 25Gbit/s circuitsJournal of Crystal Growth, 1998
- Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applicationsJournal of Crystal Growth, 1996
- Effects of a Compositionally-Graded InxGa1-xAs Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar TransistorsJapanese Journal of Applied Physics, 1995
- A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAsJournal of Electronic Materials, 1994
- Role of hot electron base transport in abrupt emitter InP/Ga0.43In0.53As heterojunction bipolar transistorsApplied Physics Letters, 1994
- Microwave characteristics of a carbon-doped base InP/InGaAs heterojunction bipolar transistor grown by chemical beam epitaxyElectronics Letters, 1993