Carrier lifetime in carbon doped In/sub 0.53/Ga/sub 0.47/As
- 23 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Carrier lifetime has been measured in carbon doped CBE grown In/sub 0.53/Ga/sub 0.47/As by time resolved luminescence with 3 ps resolution. For doping levels between 3.10/sup 18/ cm/sup -3/ and 7.10/sup 19/ cm/sup -3/, the lifetime varies between 400 and 4 picoseconds. This strong decrease is attributed to Auger recombination and induces a limitation on the DC current gain and the base sheet resistance in heterojunction bipolar transistors.Keywords
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