Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy
- 2 February 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 148 (1-2) , 1-7
- https://doi.org/10.1016/0022-0248(94)00862-0
Abstract
No abstract availableKeywords
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