Highly carbon-doped p-type Ga0.5In0.5As and Ga0.5In0.5P by carbon tetrachloride in gas-source molecular beam epitaxy
- 25 November 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (22) , 2865-2867
- https://doi.org/10.1063/1.105835
Abstract
Highly carbon‐doped, highly p‐type Ga0.5In0.5As and Ga0.5In0.5P epilayers were grown by gas‐source molecular beam epitaxy (GSMBE) using carbon tetrachloride (CCl4). Growth temperatures slightly below conventional values were used to increase the carbon incorporation, and a short‐duration post‐growth anneal near the growth temperature was necessary in order to obtain the highest hole concentrations, which were p=3×1019 cm−3 for Ga0.5In0.5As and p=5×1018 cm−3 for Ga0.5In0.5P. This is the first report of significant p‐type carbon doping for Ga0.5In0.5P and the highest concentration from carbon doping yet reported for both ternary compounds. Reversible acceptor passivation from hydrogen species in the growth environment is a plausible explanation for the annealing behavior.Keywords
This publication has 20 references indexed in Scilit:
- p-type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachlorideApplied Physics Letters, 1990
- Carbon doping of III–V compounds grown by MOMBEJournal of Crystal Growth, 1990
- Monolithic integration of complementary HBTs by selective MOVPEIEEE Electron Device Letters, 1990
- Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxyApplied Physics Letters, 1990
- Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxyJournal of Crystal Growth, 1989
- Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxyApplied Physics Letters, 1989
- Carbon diffusion in undoped, n-type, and p-type GaAsApplied Physics Letters, 1989
- Carbon incorporation in MOMBE-grown Ga0.47In0.53AsJournal of Crystal Growth, 1989
- Controlled carbon doping of GaAs by metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- GaAs growth in metal–organic MBEJournal of Vacuum Science & Technology B, 1985