Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applications
- 2 January 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 158 (3) , 210-216
- https://doi.org/10.1016/0022-0248(95)00442-4
Abstract
No abstract availableKeywords
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