CBE growth of carbon doped InGaAs/InP HBTs for 25Gbit/s circuits
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 188 (1-4) , 349-354
- https://doi.org/10.1016/s0022-0248(98)00094-3
Abstract
No abstract availableKeywords
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