Materials and electrical characteristics of carbon-doped Ga0.47In0.53As using carbontetrabromide by MOMBE for HBT device applications
- 1 July 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 164 (1-4) , 362-370
- https://doi.org/10.1016/0022-0248(96)00004-8
Abstract
No abstract availableKeywords
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