The use of CBr4 and SiBr4 doping in MOMBE and application to InP-based heterojunction bipolar transistor structures
- 1 July 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 164 (1-4) , 389-395
- https://doi.org/10.1016/0022-0248(95)01068-8
Abstract
No abstract availableKeywords
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