The use of tertiarybutylphosphine and tertiarybutylarsine for the metalorganic molecular beam epitaxy of the In0.53Ga0.47As/InP and In0.48Ga0.52P/GaAs materials systems
- 1 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 116 (3-4) , 436-446
- https://doi.org/10.1016/0022-0248(92)90653-z
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Anomalous silicon and tin doping behaviour in indium phosphide grown by chemical beam epitaxyJournal of Crystal Growth, 1990
- Gaseous dopant sources in MOMBE/CBEJournal of Crystal Growth, 1990
- Substituted arsines as As sources in MOMBEJournal of Crystal Growth, 1990
- Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphineApplied Physics Letters, 1990
- Electroreflectance of ordered Ga0.5In0.5P AlloysJournal of Crystal Growth, 1989
- Characterization of InP grown by OMVPE using trimethylindium and tertiarybutylphosphine (TBP) at low V/III ratios and reduced TBP partial pressuresJournal of Electronic Materials, 1989
- Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAsApplied Physics Letters, 1987
- Tunneling in In0.53Ga0.47As-InP double-barrier structuresApplied Physics Letters, 1987
- Morphological studies of oval defects in GaAs epitaxial layers grown by molecular beam epitaxyApplied Physics Letters, 1986
- Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and PJournal of the Electrochemical Society, 1980