Sn doping of GaAs and AlGaAs grown by metalorganic molecular beam epitaxy
- 1 February 1991
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 108 (3-4) , 827-830
- https://doi.org/10.1016/0022-0248(91)90264-6
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Surface accumulation of tin in tin-doped gallium arsenide grown by low pressure metalorganic vapor phase epitaxyApplied Physics Letters, 1984
- Kinetic limitations to surface segregation during MBE growth of III?V compounds: Sn in GaAsApplied Physics A, 1984
- Low-pressure MOVPE growth of Sn-doped GaAsElectronics Letters, 1983
- Growth and doping of gallium arsenide using molecular beam epitaxy (MBE): Thermodynamic and kinetic aspectsSurface Science, 1983
- Tin Doping of Gallium Arsenide by Metal Organic Chemical Vapor Deposition (MOCVD)Journal of the Electrochemical Society, 1983
- Nucleation effects during MBE growth of Sn-Doped GaAsApplied Physics A, 1982
- Influence of growth conditions on tin incorporation in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1980
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978
- Surface segregation of Sn during MBE of n-type GaAs established by SIMS and AESJournal of Vacuum Science and Technology, 1978
- Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxyJournal of Applied Physics, 1975