Mg doping of InP and InGaAs grown by metalorganic molecular beam epitaxy using bis-cyclopentadienyl magnesium
- 18 January 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (3) , 258-260
- https://doi.org/10.1063/1.108982
Abstract
We have investigated the feasibility of Mg doping using bis‐cyclopentadienyl magnesium (Cp2Mg) during growth of InP and InGaAs by metalorganic molecular beam epitaxy. In InP, hole concentrations between 5×1016 and 4×1018 cm−3 were readily attained without degradation of the surface morphology. Comparison with secondary ion mass spectrometry analysis shows good electrical activation for concentrations ≤2×1018 cm−3 though compensation at low doping levels was observed due to compensation from carbon and oxygen impurities which were present at levels of 9×1016 and 5×1016 cm−3, respectively. Mg profiles in InGaAs tended to be more abrupt than those in InP and hole concentrations up to 1019 cm−3 were achieved. p‐InGaAs/n‐InP structures annealed at 600 °C for 10 s showed no evidence of Mg diffusion.This publication has 5 references indexed in Scilit:
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