Mg diffusion during metalorganic vapor phase epitaxy of InP
- 4 September 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (10) , 1017-1019
- https://doi.org/10.1063/1.101721
Abstract
The diffusion mechanism of Mg has been studied during low-pressure metalorganic vapor phase epitaxy of InP. The Mg dopant profiles were measured by secondary-ion mass spectroscopy. The analysis reveals that abrupt Mg dopant profiles are possible; the Mg diffusion, however, strongly depends on the Mg concentration in the crystal lattice. Simultaneous doping with Si leads to a distinct decrease of the Mg diffusion. This behavior is consistent with a model assuming that Mg diffuses as a complex involving a deep donor.Keywords
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