High performance, long wavelength opto-electronic components by atmospheric pressure MOVPE
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 579-590
- https://doi.org/10.1016/0022-0248(86)90355-6
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Ga1-xinxas - inp abrupt heterostructures grown by MOVPE at atmospheric pressureJournal of Electronic Materials, 1986
- High-power, low-threshold BH lasers operating at 1.52 μm grown entirely by MOVPEElectronics Letters, 1985
- High-performance DC-PBH lasers at 1.52 μm by a hybrid MOVPE/LPE processElectronics Letters, 1985
- InGaAs photodiodes prepared by low-pressure MOCVDElectronics Letters, 1985
- Double heterostructure and multiquantum-well lasers at 1.5–1.7 μm grown by atmospheric pressure MOVPEElectronics Letters, 1985
- New approach to growth of abrupt heterojunctions by MOVPEElectronics Letters, 1984
- 1.2–1.6 μm GaxIn1−xAsyP1−y-InP DH lasers grown by LPMOCVDJournal of Crystal Growth, 1984
- A study of p-type dopants for InP grown by adduct MOVPEJournal of Crystal Growth, 1984
- TEM studies of MOVPE (Ga,In)As interfaces with InP substratesJournal of Crystal Growth, 1984
- Deformation-free overgrowth of InGaAsP DFB corrugationsElectronics Letters, 1983