The use of organometallic group-V sources for the metalorganic molecular beam epitaxy growth of In0.48Ga0.52P/GaAs and In0.53Ga0.47As/InP heterojunction bipolar device structures
- 1 March 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 136 (1-4) , 1-10
- https://doi.org/10.1016/0022-0248(94)90376-x
Abstract
No abstract availableKeywords
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