Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1−xP
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 564-569
- https://doi.org/10.1016/0022-0248(91)91040-h
Abstract
No abstract availableKeywords
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