High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- 4 February 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (5) , 517-519
- https://doi.org/10.1063/1.104600
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Chemical beam epitaxial growth of strained carbon-doped GaAsApplied Physics Letters, 1990
- Pyrolysis of trimethylgallium on GaAs(100) surfacesApplied Physics Letters, 1990
- Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxyJournal of Crystal Growth, 1989
- Desorption of triethylgallium during metalorganic molecular beam epitaxial growth of GaAsApplied Physics Letters, 1989
- Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachlorideApplied Physics Letters, 1989
- Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filamentApplied Physics Letters, 1988
- Controlled carbon doping of GaAs by metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga sourceJournal of Applied Physics, 1984