Raman study of hydrogen-related complexes in GaAs
- 30 April 1989
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 70 (2) , 123-125
- https://doi.org/10.1016/0038-1098(89)90958-7
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- High-resolution infrared study of the neutralization of silicon donors in gallium arsenidePhysical Review B, 1988
- Si donor neutralization in high-purity GaAsApplied Physics Letters, 1987
- Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposureApplied Physics Letters, 1986
- Electron mobility studies of the donor neutralization by atomic hydrogen in GaAs doped with siliconJournal of Applied Physics, 1986
- Hydrogenation of shallow-donor levels in GaAsJournal of Applied Physics, 1986
- Raman spectroscopy of intrinsic defects in electron and neutron irradiated GaAsApplied Physics Letters, 1985
- Hydrogen localization near boron in siliconApplied Physics Letters, 1985
- Simple Theoretical Estimates of the Schottky Constants and Virtual‐Enthalpies of Single Vacancy Formation in Zinc‐Blende and Wurtzite Type SemiconductorsJournal of the Electrochemical Society, 1975