Defect microstructure in laser-assisted modulation molecular-beam epitaxy GaAs on (100) silicon
- 1 October 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (7) , 3298-3302
- https://doi.org/10.1063/1.346380
Abstract
Two-dimensional growth of GaAs on (100) silicon has been achieved by combining laser-assisted growth and modulation molecular-beam epitaxy techniques. The misfit dislocations were shown to form a regular cross-grid with satellite reflections characteristic of a two-dimensional homoepitaxial growth as also revealed by the perfection of the moiré patterns of the GaAs/Si interface. The few antiphase domains generated at the interface were observed to annihilate very fast. The top surface of GaAs was free of antiphase domains. Planar defects such as stacking faults and microtwins are also eliminated.This publication has 14 references indexed in Scilit:
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