Amphoteric behavior of Ge implants in GaAs

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Abstract
The electrical properties of Ge‐implanted GaAs have been studied. Room‐temperature implantation was performed at 120 keV with doses ranging from 5×1012 to 3×1015/cm2. Implanted samples were annealed with pyrolytic Si3N4 encapsulants at temperatures ranging from 700 to 950 °C. It was found that both p‐ and n‐type layers were produced, depending upon ion dose and anneal temperature. For doses of ∼1×1014/cm2 or below, the implanted layer is p type at anneal temperatures up to 950 °C, with electrical activation up to 38%. For doses of ∼1×1015/cm2 or above, the implanted layer is n type at all anneal temperatures, with activation up to 5%. For the intermediate dose of 3×1014/cm2, the conductivity changes from p to n type at an anneal temperature between 900 and 950 °C.

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