Exciton effects on luminescence of undoped active layers in GaAs-Ga1−xAlxAs double-heterostructure crystals at temperatures between 77 and 300 K

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Abstract
Photoluminescence and injection luminescence of the undoped active layers in GaAs‐Ga1−xAlxAs double‐heterostructure crystals were measured at temperatures between 77 and 300 K. The temperature dependence of photoluminescence showed that exciton effects play important roles in the near‐band‐edge emission. The observed spectral shapes were compared with that calculated by assuming the band‐to‐band transition, exciton effects, and the k‐selection rule. Excellent agreement between experiment and theory was obtained for the spectral shapes at 77 and 300 K. Furthermore, the photocurrent spectra of the diode fabricated from the double‐heterostructure crystal supported this result.