Angled etching of GaAs/AlGaAs by conventional Cl2 reactive ion etching
- 19 December 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (25) , 2549-2551
- https://doi.org/10.1063/1.100204
Abstract
Angled etching of GaAs and GaAs/AlGaAs double heterostructures was achieved in a conventional Cl2 reactive ion etching system. A new angled holder, which has a recessed groove structure where the substrate is positioned, was used to eliminate bending of the ion trajectory around the substrate. The facet angle is accurately determined by the angle of the groove wall. Equal etching rates and smooth facets were obtained by using a load‐locked system and trilevel photoresist masking. This simple dry etch process is suitable for the formation of optoelectronic integrated circuits such as surface‐emitting lasers.Keywords
This publication has 7 references indexed in Scilit:
- Monolithic two-dimensional surface-emitting arrays of GaAs/AlGaAs diode lasersApplied Physics Letters, 1987
- Nonselective etching of GaAs/AlGaAs double heterostructure laser facets by Cl2 reactive ion etching in a load-locked systemApplied Physics Letters, 1987
- Low-threshold InGaAsP/InP 1.3 μm doubly buried-heterostructure lasers with a reactive-ion-etched facetElectronics Letters, 1986
- Oxygen ion beam etching for pattern transferJournal of Vacuum Science & Technology B, 1984
- Directional reactive-ion-etching of InP with Cl2 containing gasesJournal of Vacuum Science and Technology, 1981
- Microfabrication by ion-beam etchingJournal of Vacuum Science and Technology, 1979
- Ion−beam etchingJournal of Vacuum Science and Technology, 1975