Characterization of interface structure in GaInAs/InP superlattices by means of X-ray diffraction
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 583-588
- https://doi.org/10.1016/0022-0248(92)90521-j
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Mode of growth in LP-MOVPE deposition of GalnAs/lnP quantum wellsJournal of Electronic Materials, 1990
- Optical properties of very narrow GaInAs/InP quantum wells grown by low-pressure metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- Interface roughness and charge carrier recombination lifetimes in GaInAs/InP quantum wells grown by LP-MOVPEJournal of Crystal Growth, 1988
- Composition and lattice-mismatch measurement of thin semiconductor layers by x-ray diffractionJournal of Applied Physics, 1987