Band-Filling Current in Heavily Doped GaAs Diodes
- 1 August 1965
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (8) , 2585-2586
- https://doi.org/10.1063/1.1714535
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Light Emission from Reverse Biased GaAs and InP p-n JunctionsJournal of Applied Physics, 1964
- THE ROLE OF DIFFUSION CURRENT IN THE ELECTROLUMINESCENCE OF GaAs DIODESApplied Physics Letters, 1964
- Electron-Hole and Electron-Impurity Band Tunneling in GaAs Luminescent JunctionsPhysical Review Letters, 1963
- BAND-FILLING MODEL FOR GaAs INJECTION LUMINESCENCEApplied Physics Letters, 1963
- Degenerate Germanium. I. Tunnel, Excess, and Thermal Current in Tunnel DiodesPhysical Review B, 1962
- Excess Tunnel Current in Silicon Esaki JunctionsPhysical Review B, 1961
- Influence of Degeneracy on Recombination Radiation in GermaniumPhysical Review Letters, 1960