THE ROLE OF DIFFUSION CURRENT IN THE ELECTROLUMINESCENCE OF GaAs DIODES
- 15 October 1964
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 5 (8) , 168-169
- https://doi.org/10.1063/1.1754101
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- EFFECTS OF γ-IRRADIATION UPON LIFETIME AND LUMINESCENCE OF GaP DIODESApplied Physics Letters, 1964
- P-N junction lasersProceedings of the IEEE, 1964
- Carrier Transport Across Electroluminescent p-n Junctions in GaAsJournal of Applied Physics, 1964
- Coherent light emission from p-n junctionsSolid-State Electronics, 1963
- DEGRADATION OF LUMINESCENCE IN NEUTRON-IRRADIATED GaAs DIODESApplied Physics Letters, 1963
- Electron-Hole and Electron-Impurity Band Tunneling in GaAs Luminescent JunctionsPhysical Review Letters, 1963
- Dependence of Recombination Radiation on Current in GaAs DiodesJournal of Applied Physics, 1963
- Tunneling-Assisted Photon Emission in Gallium ArsenideJunctionsPhysical Review Letters, 1962
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957