Atomic Force Microscopy Study of Self-Affine Fractal Roughness of Porous Silicon Surfaces
- 1 July 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (7R)
- https://doi.org/10.1143/jjap.37.3951
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Validity of the Linear Growth Equation for Interface Evolution for Copper Electrodeposition in the Presence of Organic AdditivesPhysical Review Letters, 1997
- Stable Growth and Kinetic Roughening in Electrochemical DepositionPhysical Review Letters, 1994
- Scaling Analysis of SiO2/Si Interface Roughness by Atomic Force MicroscopyJapanese Journal of Applied Physics, 1994
- Analysis of fractal surfaces using scanning probe microscopy and multiple-image variography. 1. Some general considerationsThe Journal of Physical Chemistry, 1993
- Analysis of fractal surfaces using scanning probe microscopy and multiple-image variography. 2. Results on fractal and nonfractal surfaces, observation of fractal crossovers, and comparison with other fractal analysis techniquesThe Journal of Physical Chemistry, 1993
- Scanning tunneling microscopy observation of self-affine fractal roughness in ion-bombarded film surfacesPhysical Review Letters, 1993
- Self-Affine Fractal Vapour-Deposited Gold Surfaces Characterization by Scanning Tunnelling MicroscopyEurophysics Letters, 1992
- Kinetic growth with surface relaxation: Continuum versus atomistic modelsPhysical Review Letters, 1991
- Continuum models of crystal growth from atomic beams with and without desorptionJournal de Physique I, 1991
- Dynamic Scaling of Growing InterfacesPhysical Review Letters, 1986