Observation of electron traps in electrochemically deposited CdTe films
- 1 February 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (2) , 121-125
- https://doi.org/10.1016/0038-1101(81)90005-8
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Cathodic Deposition and Characterization of Metallic or Semiconducting Binary Alloys or CompoundsJournal of the Electrochemical Society, 1978
- Capacitance of cadmium telluride Schottky diodesPhysica Status Solidi (a), 1978
- Cathodic Deposition of CdTe from Aqueous ElectrolytesJournal of the Electrochemical Society, 1978
- Activation Energy Analysis of Defect Levels in Semi-Insulating CDTE Detector MaterialIEEE Transactions on Nuclear Science, 1977
- Barrier heights on cadmium telluride schottky solar cellsRevue de Physique Appliquée, 1977
- Characterization of CdTe with photoelectronic techniquesRevue de Physique Appliquée, 1977
- Transient and steady state space-charge-limited current in CdTeSolid-State Electronics, 1975
- Determination of deep levels in semi-insulating cadmium telluride by thermally stimulated current measurementsPhysica Status Solidi (a), 1975
- Tunneling in CdTe Schottky BarriersPhysical Review B, 1969
- Transient Currents in Semi-Insulating CdTe Characteristic of Deep TrapsJournal of Applied Physics, 1968