One-dimensional all injection nonquasi-static models for arbitrarily doped quasi-neutral layers in bipolar junction transistors including plasma-induced energy-gap narrowing
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (1) , 250-261
- https://doi.org/10.1109/16.43822
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- The effect of high injection on the density of states of siliconPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A new approach to A.C. characterization of bipolar transistorsSolid-State Electronics, 1988
- Energy-gap and electron-affinity contractions and their importance in bipolar device simulatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1988
- Non-quasi-static small-signal models for semiconductor junction diodes with extensions for transistorsSolid-State Electronics, 1987
- Generalized reciprocity theorem for semiconductor devicesJournal of Applied Physics, 1985
- A Model for Band‐Gap Shrinkage in Semiconductors with Application to SiliconPhysica Status Solidi (b), 1985
- Evidence for excess carrier storage in electron-hole plasma in silicon transistorsIEEE Electron Device Letters, 1985
- Collector models for bipolar transistorsSolid-State Electronics, 1973
- The equivalent circuit model in solid-state electronics—IIISolid-State Electronics, 1970
- Conditions at a p-n junction in the presence of collected currentSolid-State Electronics, 1963