Surface roughness evolution on glow discharge a-Si:H
- 15 February 1987
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (4) , 1662-1664
- https://doi.org/10.1063/1.338059
Abstract
In situ ellipsometry has been used to probe the evolution of surface roughness over a wide range of film thickness during the growth of glow discharge hydrogenated amorphous silicon (a‐Si:H). For a‐Si:H prepared with pure SiH4, a a‐Si:H prepared with SiH4 highly diluted in Ar, a gradual increase in the roughness layer of ∼100 Å is detected over the same film thickness range. The differences are consistent with recent proposals of different growth mechanisms for the two gas conditions.This publication has 9 references indexed in Scilit:
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