Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures

1 January 1993

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 32 (1S)
https://doi.org/10.1143/jjap.32.544

Abstract

GaAs/GaAs_1-xP_x strained-barrier quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE) have been investigated using photoreflectance (PR) spectroscopy. On the basis of the square-potential model, we have determined the band offsets at the heterojunction and their dependence on the phosphorus composition. It was found that in the GaAs/GaAs_1-xP_x strained-barrier quantum well, the band offsets are almost linearly dependent on the phosphorus composition in the range of x≤0.23. In addition, it was derived that the conduction band offset ratio Q _c=0.57±0.05. This result is consistent with our previous study concerning GaAs/GaAsP “strained-well” quantum well structures.

Keywords

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