An all-NbN time domain reflectometer chip functional above 8 K
- 1 March 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 25 (2) , 770-776
- https://doi.org/10.1109/20.92402
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Experimental investigations and analysis for high-quality Nb/Al-AlOx/ Nb Josephson junctionsJournal of Applied Physics, 1987
- A Josephson junction time domain reflectometer with room temperature accessIEEE Transactions on Magnetics, 1987
- Fabrication and performance of all NbN Josephson junction circuitsIEEE Transactions on Magnetics, 1987
- An all-niobium eight level process for small and medium scale applicationsIEEE Transactions on Magnetics, 1987
- Niobium nitride Josephson tunnel junctions with magnesium oxide barriersApplied Physics Letters, 1985
- High quality refractory Josephson tunnel junctions utilizing thin aluminum layersApplied Physics Letters, 1983
- Generation and measurement of ultrashort current pulses with Josephson devicesApplied Physics Letters, 1980