Solid composition of alloy semiconductors grown by MOVPE, MBE, VPE hand ALE
- 1 November 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 98 (1-2) , 118-126
- https://doi.org/10.1016/0022-0248(89)90192-9
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 24 references indexed in Scilit:
- The VPE growth of InGaP by the single flat temperature zone methodJournal of Crystal Growth, 1988
- Solid Composition of In1-xGaxAs Grown by the Halogen Transport Atomic Layer EpitaxyJapanese Journal of Applied Physics, 1988
- Thermodynamic analysis of molecular beam epitaxy of III–V semiconductorsJournal of Crystal Growth, 1986
- MOCVD growth of (AlxGa1−x)yIn1−yP and double heterostructures for visible light lasersJournal of Crystal Growth, 1984
- The characterisation of Ga1−xInxAs,Al1−xInxAs and InP epitaxial layers prepared by metal organic chemical vapour depositionJournal of Crystal Growth, 1984
- Modeling of chemical vapor depositionJournal of Crystal Growth, 1982
- Organometallic VPE Growth of InAs1-x-ySbxPy on InAsJapanese Journal of Applied Physics, 1981
- Organometallic VPE Growth of InAs1-xSbxon InAsJapanese Journal of Applied Physics, 1980
- Vapor Phase Epitaxial Growth and Characterization of Ga1-yInyAs1-xPxQuaternary AlloysJapanese Journal of Applied Physics, 1977
- Calculation of ternary and quaternary III–V phase diagramsJournal of Crystal Growth, 1974