Geometrical factors of argon incorporation in SiO2 films deposited by ion beam sputtering
- 1 October 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 120 (4) , 313-327
- https://doi.org/10.1016/0040-6090(84)90245-1
Abstract
No abstract availableKeywords
This publication has 48 references indexed in Scilit:
- Ion beam sputter deposition of layered magnetic thin filmsJournal of Magnetism and Magnetic Materials, 1983
- Ion beam deposition of special film structuresJournal of Vacuum Science and Technology, 1981
- Adherence of ion beam sputter deposited metal films on H-13 steelJournal of Vacuum Science and Technology, 1981
- Deposition of epitaxial layers by ion beam methodsJournal of Vacuum Science and Technology, 1980
- Abstract: Focused ion beam designs for sputter depositionJournal of Vacuum Science and Technology, 1979
- Characteristics of ion-beam-sputtered thin filmsJournal of Vacuum Science and Technology, 1979
- Some trends in preparing film structures by ion beam methodsThin Solid Films, 1978
- Reactive ion beam sputtering of thin films of lead, zirconium and titaniumThin Solid Films, 1977
- Ion beam sputtering and its application for the deposition of semiconducting filmsThin Solid Films, 1972
- Ion-Beam Techniques for Device FabricationJournal of Vacuum Science and Technology, 1971