The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics
- 30 September 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 48 (1-4) , 307-310
- https://doi.org/10.1016/s0167-9317(99)00395-0
Abstract
No abstract availableKeywords
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