Self-developing resist with submicrometer resolution and processing stability
- 1 July 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (1) , 74-76
- https://doi.org/10.1063/1.94126
Abstract
Nitrocellulose films have been shown to function as self-developing resist layers that are sensitive to both low-energy (<2 keV) Ar+ ions and to 193-nm UV radiation from pulsed excimer lasers. A resolution of 25:1 have been demonstrated using a stencil mask and an argon ion beam; the resolution obtained was mask limited. The sensitivity of the resist to 2-keV Ar+ ions is 36 μm/min at beam currents of 1 mA/cm2, allowing exposure times of 1 s for 0.5 μm of resist. The material is capable of functioning as a mask material for typical semiconductor dry etching processes.Keywords
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