Millimetre wave performance of carbon-doped-base AlGaAs/GaAs HBTs
- 20 June 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (13) , 1145-1147
- https://doi.org/10.1049/el:19910714
Abstract
AlGaAs/GaAs HBTs with fT of 52 GHz and fmax of 85 GHz have been obtained using a heavily-carbon-doped base layer. The HBT epitaxial layers were prepared by low-pressure MOVPE using carbon tetrachloride as the carbon source. To the authors' knowledge, this work reports the first carbondoped AlGaAs/GaAs HBTs with fT and fmax greater than 50 GHz.Keywords
This publication has 1 reference indexed in Scilit:
- Ultra-high speed AlGaAs/GaAs heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003