p n junctions in tungsten diselenide

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Abstract
pn junctions in WSe2 have been fabricated for the first time. 10–20‐μm‐thick p‐type layers were grown epitaxially on n‐type substrates by vapor transport at 1060–1070 °C in sealed ampoules. 5–10‐mm2 diodes exhibit rectification ratios ∼104 for 0.5‐V bias. The diode space charge is ∼10 μm wide, indicating a small gradient in the density of electrically active impurities. At room temperature the diode current is dominated by generation/recombination. The current is space‐charge limited at lower temperatures.