Observation of velocity overshoot in silicon inversion layers
- 1 October 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (10) , 484-486
- https://doi.org/10.1109/55.244738
Abstract
Employing a test structure, velocity overshoot in silicon inversion layers is observed at room temperature. For channel lengths longer than 0.3 mu m, the velocity/field relation follows the well-known behavior with no channel length dependence. The first indication of velocity overshoot is seen at a channel length of 0.22 mu m, while at L=0.12 mu m, drift velocities up to 35% larger than the long-channel value are measured.<>Keywords
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