Influence of annealing temperature on the properties of Cu(In,Ga)Se2 thin films by thermal crystallization in Se vapor
- 31 January 1998
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 50 (1-4) , 1-6
- https://doi.org/10.1016/s0927-0248(97)00091-3
Abstract
No abstract availableKeywords
Funding Information
- Korea Toray Science Foundation
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 4 references indexed in Scilit:
- Large Grain Growth in Cu(In, Ga)Se 2 Thin Films with Band Gap of around 1.4 eV by Thermal Crystallization in Saturated Se VaporsJapanese Journal of Applied Physics, 1996
- Preparation of Device-Quality Cu(In, Ga)Se2 Thin Films Deposited by Coevaporation with Composition MonitorJapanese Journal of Applied Physics, 1995
- Preparation and Characterizations of CuInxGa1-xSe2 Thin Films Crystallized by AnnealingJapanese Journal of Applied Physics, 1993
- Structural properties of CuInxGa1−xSe2 thin films prepared by rf sputteringJournal of Applied Physics, 1992