Solid phase recrystallization in molecular beam deposited gallium arsenide
- 20 February 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (8) , 706-708
- https://doi.org/10.1063/1.100869
Abstract
A series of experimental investigations on the solid phase recrystallization of molecular beam deposited gallium arsenide films on silicon dioxide/tantalum/nickel substrates has been performed. The activation energy for recrystallization is unexpectedly small (0.55 eV) in the temperature range 450–600 °C. When a thin amorphous germanium layer was grown before gallium arsenide deposition, an enhanced grain growth of gallium arsenide occurs together with anomalous germanium diffusion into the gallium arsenide layer in a semieutectic phase reaction. An enhancement of grain growth has also been observed by the utilization of a graphoepitaxy substrate having inverted pyramidal relief.Keywords
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