Universal relationship between resonant frequency and damping rate of 1.3 μm InGaAsP semiconductor lasers
- 16 March 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (11) , 653-655
- https://doi.org/10.1063/1.98110
Abstract
Analysis of the measured frequency response of 1.3 μm InGaAsP vapor phase regrown buried heterostructure lasers shows that there is a universal linear relationship between damping rate and resonant frequency squared with a proportionality factor of 0.32×10−9 s. This result can be explained by the intraband relaxation model of nonlinear gain.Keywords
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