High-speed modulation of semiconductor lasers
- 1 December 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 3 (6) , 1180-1192
- https://doi.org/10.1109/jlt.1985.1074340
Abstract
An overview is given of the direct modulation performance of high-speed semiconductor lasers. The high-speed response characteristics are described using a cascaded two-port model of the laser. This model separates the electrical parasitics from the intrinsic laser and enables these subsections to be considered separately. The presentation concentrates on the small-signal intensity modulation and frequency modulation responses, and the large-signal switching transients and chirping. Device-dependent limitations on high-speed performance are explored and circuit modeling techniques are briefly reviewed.Keywords
This publication has 66 references indexed in Scilit:
- Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasersIEEE Journal of Quantum Electronics, 1985
- Ultra-high speed semiconductor lasersIEEE Journal of Quantum Electronics, 1985
- An analytic model for the modulation response of buried heterostructure lasersIEEE Journal of Quantum Electronics, 1984
- High-frequency characteristics of GaAlAs injection lasersIEEE Journal of Quantum Electronics, 1982
- Noise equivalent circuit of a semiconductor laser diodeIEEE Journal of Quantum Electronics, 1982
- Nonlinear circuit model for semiconductor lasersOptical and Quantum Electronics, 1981
- Buried heterostructure AlGaAs lasers on semi-insulating substratesElectronics Letters, 1981
- The intrinsic electrical equivalent circuit of a laser diodeIEEE Journal of Quantum Electronics, 1981
- Impedance characteristics of double-hetero structure laser diodesSolid-State Electronics, 1979
- Effect of gain saturation on injection laser switchingJournal of Applied Physics, 1979