Large electro-optic effect in tensile strained Ge-on-Si films
- 16 October 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (16) , 161115
- https://doi.org/10.1063/1.2363948
Abstract
The authors report the first observation of a large, strain-enhanced, electro-opticeffect in the weakly absorbing regime for Geepitaxial films grown directly on Si substrates. The field dependence of absorption in the Ge films was measured from spectral responsivity measurements of Ge-on-Si p - i - n diodes. The experimental data were analyzed using the generalized Franz-Keldysh formalism [H. Shen and F. H. Pollak, Phys. Ref. B42, 7097 (1990)] and the valence band edge shifts of the light- and heavy-hole energy positions were in response to biaxial stress. With measured Δ α ∕ α ∼ 3 and derived Δ n ∕ F = 280 pm ∕ V , the material has significant potential for field-induced phase or electroabsorption modulator devices.Keywords
This publication has 14 references indexed in Scilit:
- Strong quantum-confined Stark effect in germanium quantum-well structures on siliconNature, 2005
- Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrateJournal of Applied Physics, 2005
- Micrometre-scale silicon electro-optic modulatorNature, 2005
- Deformation potential constants of biaxially tensile stressedepitaxial films onPhysical Review B, 2004
- Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunicationsApplied Physics Letters, 2004
- A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitorNature, 2004
- Strain-induced band gap shrinkage in Ge grown on Si substrateApplied Physics Letters, 2003
- Silicon-based optoelectronicsProceedings of the IEEE, 1993
- Electrooptical effects in siliconIEEE Journal of Quantum Electronics, 1987
- Franz-Keldysh Effect in the Space-Charge Region of a GermaniumJunctionPhysical Review B, 1965