Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-Si:H/a-Si1−xCx:H multilayers

Publisher Website
Google Scholar
Abstract
Small angle x-ray diffraction was used to diagnose the structural properties of a-Si:H/a-Si1−xCx:H multilayers deposited by rf glow discharge. Precise deposition rates were obtained from the experimental data. Two growth parameters were varied: the methane concentration in the gaseous mixture and the intermediary plasma etching time between consecutive depositions. Some samples had an additional buffer layer between the substrate and the heterostructure. The sharpest interfaces were obtained on samples with the intermediate buffer layer, plasma etching times of at least 2 min, and diamond-like a-Si1−xCx:H layers. Profiling by Auger electron spectroscopy and small angle x-ray diffraction results were used to estimate the interface thickness.

This publication has 20 references indexed in Scilit: