Energy levels in ideal and reconstructed models of a silicon vacancy
- 10 November 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (31) , 4603-4609
- https://doi.org/10.1088/0022-3719/14/31/010
Abstract
The recursion method is used to investigate the electronic states of ideal and reconstructed vacancy models in silicon. The matrix elements of the Hamiltonian are taken from Pandey and Phillips, but atoms coupling across the vacancy are treated as first nearest neighbours. The exponential decay factor, beta , for these elements is fitted to self-consistent calculations of the ideal vacancy. The shifts in levels of reconstructed vacancies appear weaker (by up to a factor 2) than those of self-consistent calculations.Keywords
This publication has 15 references indexed in Scilit:
- Deep levels in semiconductorsAdvances in Physics, 1980
- Scattering-theoretic method for defects in semiconductors. II. Self-consistent formulation and application to the vacancy in siliconPhysical Review B, 1980
- Electronic Structure of the Jahn-Teller Distorted Vacancy in SiliconPhysical Review Letters, 1979
- Silicon Vacancy: A Possible "Anderson Negative-" SystemPhysical Review Letters, 1979
- Self-consistent pseudopotential calculation of electronic states associated with a reconstructed silicon vacancyPhysical Review B, 1979
- Self-Consistent Green's-Function Calculation of the Ideal Si VacancyPhysical Review Letters, 1978
- The dependence of the energy gap in covalent semiconductors on short-range order. I. DiamondJournal of Physics C: Solid State Physics, 1978
- Electronic energy structure of amorphous siliconPhysical Review B, 1976
- Calculation of the energy levels of a neutral vacancy and of self-interstitials in siliconJournal of Physics C: Solid State Physics, 1976
- Electronic structure based on the local atomic environment for tight-binding bandsJournal of Physics C: Solid State Physics, 1972