X-Ray Topography Examination of Lattice Distortions in LEC-Grown GaAs Single Crystals
- 1 December 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (12A) , L948
- https://doi.org/10.1143/jjap.24.l948
Abstract
We observed lattice distortions in liquid encapsulated Czochralski (LEC)-grown GaAs crystals by double crystal reflection topography. A large variation of lattice orientation due to dislocations was observed in undoped GaAs crystals and at slippage from the wafer periphery in In-doped GaAs crystals, while a large variation of lattice spacing was observed in In-doped GaAs crystals.Keywords
This publication has 3 references indexed in Scilit:
- A double-line image of a dislocation in a silicon single crystal observed by X-ray plane wave topographyPhilosophical Magazine A, 1981
- X-Ray Crystal Collimators Using Successive Asymmetric Diffractions and Their Applications to Measurements of Diffraction Curves. I. General Considerations on CollimatorsJournal of the Physics Society Japan, 1970
- Measurements on Local Variations in Spacing and Orientation of the Lattice Plane of Silicon Single Crystals by X-Ray Double-Crystal TopographyJapanese Journal of Applied Physics, 1966