A 16ns 16K bipolar RAM
- 1 January 1983
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A 16ns 150mW ECL compatible static RAM will be described. Cell and die size of 569μm 2 and 16.4mm 2 have been achieved with oxide-isolated poly silicon-walled emitter transistors.Keywords
This publication has 2 references indexed in Scilit:
- A 35ns 16K NMOS static RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- A high-speed low-power 4096 x 1 bit bipolar RAMIEEE Journal of Solid-State Circuits, 1978