Noise from Neutron Induced Defects in Junction Field Effect Transistors
- 1 January 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 17 (6) , 256-261
- https://doi.org/10.1109/tns.1970.4325802
Abstract
Neutron damage centers in the depletion region between the gates and channel of a JFET fluctuate in charge and modulate the drain current. Thus, they create noise. The noise from 1012 14.8 MeV neutrons/cm2 is easily measured. Temperature dependence of leakage current indicates a neutron damage generation-recombination level effective at about Ec - 0.5 eV. The noise spectral distribution cannot be adequately characterized by a two state trap with single characteristic lifetimes for the two states.Keywords
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